p age:p 3 - p 1 plastic - encapsulate diodes guangdong hottech industrial co,. ltd. zener diodes fe a tures planar die construction general purpose, medium current ideally suited for automated assembly processes available in lead free version maxim um ratings @ t a=2 5 ! unless ot h erwise specified chara c teris t ic s y mbol value unit forwa r d voltage @ i f =10ma v f 0.9 v power dissipation p d 200 mw thermal resistance,junction to ambie n t air r ja 625 /w junction temperatu r e t j 150 storage temperatu r e ra n ge t s tg - 65 - 150 notes: 1. valid provi d ed that device terminals are kept at a m bient temperature. 2. short dur at ion test pulse used in minimize self - h eating effect. 3. f = 1khz. b zt52c 2v0 s --- bzt52c 39s sod - 323 - +
p age:p 3 - p 2 plastic - encapsulate diodes guangdong hottech industrial co,. ltd. electrical characteristics ( ta = 25 unless otherwise specified ) t y pe n u m b er marking co d e zener volt a ge ra n ge maximum zener imped a nce maximum rever s e current t emperature coeffic i ent of zener v o lta g e @ i z t c mv/ v z @i zt i zt z zt @i zt z z k @i zk i zk i r @v r nom(v) min(v) ma x ( v) ma ? ma a v min max bz t 52c2v0s w y 2.0 1.91 2 . 09 5 100 600 1.0 150 1.0 - 3.5 0 bz t 52c2v4s w x 2.4 2.2 2 . 60 5 100 600 1.0 50 1.0 - 3.5 0 bz t 52c2v7s w 1 2.7 2.5 2 . 9 5 100 600 1.0 20 1.0 - 3.5 0 bz t 52c3v0s w 2 3.0 2.8 3 . 2 5 95 600 1.0 10 1.0 - 3.5 0 bz t 52c3v3s w 3 3.3 3.1 3 . 5 5 95 600 1.0 5 1.0 - 3.5 0 bz t 52c3v6s w 4 3.6 3.4 3 . 8 5 90 600 1.0 5 1.0 - 3.5 0 bz t 52c3v9s w 5 3.9 3.7 4 . 1 5 90 600 1.0 3 1.0 - 3.5 0 bz t 52c4v3s w 6 4.3 4.0 4 . 6 5 90 600 1.0 3 1.0 - 3.5 0 bz t 52c4v7s w 7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 - 3.5 0.2 bz t 52c5v1s w 8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 - 2.7 1.2 bz t 52c5v6s w 9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 - 2.0 2.5 bz t 52c6v2s w a 6.2 5.8 6 . 6 5 10 150 1.0 3 4.0 0.4 3.7 bz t 52c6v8s w b 6.8 6.4 7 . 2 5 15 80 1.0 2 4.0 1.2 4.5 bz t 52c7v5s w c 7.5 7.0 7 . 9 5 15 80 1.0 1 5.0 2.5 5.3 bz t 52c8v2s w d 8.2 7.7 8.7 5 15 80 1.0 0 .7 5.0 3.2 6.2 bz t 52c9v1s w e 9.1 8.5 9.6 5 15 100 1.0 0 .5 6.0 3.8 7.0 bz t 52c10s w f 10 9.4 10.6 5 20 150 1.0 0 .2 7.0 4.5 8.0 bz t 52c 1 1 s wg 1 1 10.4 1 1 .6 5 20 150 1.0 0 .1 8.0 5.4 9.0 bz t 52c12s w h 12 1 1 .4 12.7 5 25 150 1.0 0 .1 8.0 6.0 10.0 bz t 52c13s w i 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 1 1.0 bz t 52c15s w j 15 13.8 15.6 5 3 0 200 1.0 0 .1 10.5 9.2 13.0 bz t 52c16s w k 16 15.3 17.1 5 40 200 1.0 0.1 1 1.2 10.4 14.0 bz t 52c18s w l 18 16.8 19.1 5 45 225 1.0 0 .1 12.6 12.4 16.0 bz t 52c20s w m 20 18.8 21.2 5 55 225 1.0 0 .1 14.0 14.4 18.0 bz t 52c22s w n 22 20.8 23.3 5 55 250 1.0 0 .1 15.4 16 .4 20.0 bz t 52c24s w o 24 22.8 25.6 5 70 250 1.0 0 .1 16.8 18.4 22.0 bz t 52c27s w p 27 25.1 28.9 2 80 300 0.5 0 .1 18.9 21.4 25.3 bz t 52c30s w q 30 28.0 32.0 2 80 300 0.5 0 .1 21.0 24.4 29.4 bz t 52c33s w r 33 31.0 35.0 2 80 325 0.5 0 .1 23.1 27.4 33.4 bz t 52c36s w s 36 34.0 38.0 2 90 350 0.5 0 .1 25.2 30.4 37.4 bz t 52c39s wt 39 37.0 41.0 2 130 350 0.5 0 .1 27.3 33.4 41.2 notes: 1. valid provided that device terminals are kept at ambient temperature. 2. tested with pulses, period=5ms, pulse width = 300s. 3. f = 1khz. b zt52c 2v0 s --- bzt52c 39s
p age:p 3 - p 3 plastic - encapsulate diodes guangdong hottech industrial co,. ltd. typical characteristics b zt52c 2v0 s --- bzt52c 39s
|
